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| Transistor 2SD661, 2SD661A Silicon NPN epitaxial planer type For low-frequency and low-noise amplification Unit: mm 6.90.1 1.5 2.50.1 1.0 1.0 2.40.2 2.00.2 3.50.1 s Features q q q 1.5 R0.9 R0.9 0.85 Parameter Collector to base voltage Collector to 2SD661 2SD661A 2SD661 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings 35 55 35 55 7 200 100 400 150 -55 ~ +150 Unit 3 2 1 V 2.5 2.5 emitter voltage 2SD661A Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature V V mA mA mW C C 1:Base 2:Collector 3:Emitter EIAJ:SC-71 M Type Mold Package s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage 2SD661 2SD661A 2SD661 2SD661A (Ta=25C) Symbol ICBO ICEO VCBO VCEO VEBO hFE* VCE(sat) fT NV Conditions VCB = 20V, IE = 0 VCE = 20V, IB = 0 IC = 10A, IE = 0 IC = 2mA, IB = 0 IE = 10A, IC = 0 VCE = 10V, IC = 2mA IC = 100mA, IB = 10mA VCB = 10V, IE = -2mA, f = 200MHz VCE = 10V, IC = 1mA, GV = 80dB Rg = 100k, Function = FLAT 200 150 35 55 35 55 7 210 650 1 V MHz mV min typ max 0.1 1 Unit A A V 1.250.05 s Absolute Maximum Ratings (Ta=25C) 0.550.1 0.450.05 4.10.2 Low noise voltage NV. High foward current transfer ratio hFE. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 0.4 1.00.1 R 0. 4.50.1 7 V V Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Noise voltage *h FE Rank classification R 210 ~ 340 S 290 ~ 460 T 360 ~ 650 hFE Rank 1 Transistor PC -- Ta 500 160 140 2SD661, 2SD661A IC -- VCE Ta=25C 160 VCE=5V Ta=25C 140 IC -- I B Collector power dissipation PC (mW) Collector current IC (mA) 120 100 Collector current IC (mA) 400 IB=350A 300A 250A 120 100 80 60 40 20 0 300 80 60 40 20 200A 150A 100A 50A 200 100 0 0 20 40 60 80 100 120 140 160 0 0 2 4 6 8 10 12 0 0.1 0.2 0.3 0.4 0.5 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Base current IB (mA) IB -- VBE 800 VCE=5V Ta=25C 700 100 120 IC -- VBE Collector to emitter saturation voltage VCE(sat) (V) 100 30 10 3 1 0.3 25C VCE=5V VCE(sat) -- IC IC/IB=10 Base current IB (A) 600 500 400 300 200 100 0 0 0.2 0.4 0.6 0.8 1.0 Collector current IC (mA) Ta=75C 80 -25C 60 40 Ta=75C 0.1 0.03 0.01 0.1 25C -25C 20 0 0 0.4 0.8 1.2 1.6 2.0 0.3 1 3 10 30 100 Base to emitter voltage VBE (V) Base to emitter voltage VBE (V) Collector current IC (mA) hFE -- IC 720 VCE=5V 500 fT -- I E Collector output capacitance Cob (pF) VCB=5V Ta=25C 20 Cob -- VCB IE=0 f=1MHz Ta=25C 16 Forward current transfer ratio hFE 600 Ta=75C 480 Transition frequency fT (MHz) 400 25C 300 12 360 -25C 200 8 240 120 100 4 0 0.1 0.3 1 3 10 30 100 0 - 0.1 - 0.3 -1 -3 -10 -30 -100 0 0.1 0.3 1 3 10 30 100 Collector current IC (mA) Emitter current IE (mA) Collector to base voltage VCB (V) 2 Transistor NV -- VCE 160 140 IC=1mA GV=80dB Function=FLAT 300 Rg=100k 2SD661, 2SD661A NV -- VCE 160 140 VCE=10V GV=80dB Function=FLAT NV -- IC Noise voltage NV (mV) Noise voltage NV (mV) 120 Rg=100k 100 80 60 40 20 0 1 3 10 30 100 22k Noise voltage NV (mV) 240 IC=1mA GV=80dB Function=RIAA 180 120 100 80 60 40 4.7k 20 0 0.01 Rg=100k 120 22k 60 4.7k 22k 4.7k 0 1 3 10 30 100 0.03 0.1 0.3 1 Collector to emitter voltage VCE (V) Collector to emitter voltage VCE (V) Collector current IC (mA) NV -- IC 300 VCE=10V GV=80dB Function=RIAA 160 140 NV -- Rg 300 VCE=10V GV=80dB Function=FLAT NV -- Rg VCE=10V GV=80dB Function=RIAA Noise voltage NV (mV) Noise voltage NV (mV) 120 100 80 60 IC=1mA 40 0.5mA 20 0 0.1mA Noise voltage NV (mV) 240 240 IC=1mA 180 180 Rg=100k 120 22k 60 4.7k 120 0.5mA 60 0.1mA 0 0.01 0 1 3 10 30 100 1 3 10 30 100 0.03 0.1 0.3 1 Collector current IC (mA) Signal source resistance Rg (k) Signal source resistance Rg (k) 3 |
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